The multi-layered OLED sample is measured by spectral-domain interferometer. The tehcnology can measure the thickness of each layer as well as the total thickness. The refractice index of each layer can be compensated in real time.


We have proposed and demonstrated a novel method that can determine both the geometrical thickness and refractive index of a silicon wafer at the same time using an optical comb. The geometrical thickness and refractive index of a silicon wafer was determined from the optical thickness using phase information obtained in the spectral domain. In a feasibility test, the geometrical thickness and refractive index of a wafer were measured to be 334.85 μm and 3.50, respectively. The measurement uncertainty for the geometrical thickness was evaluated as 0.95 μm (k = 1) using a preliminary setup.


We have proposed and demonstrated a novel method to measure depths of through silicon vias (TSVs) at high speed. TSVs are fine and deep holes fabricated in silicon wafers for 3D semiconductors; they are used for electrical connections between vertically stacked wafers. Because the high-aspect ratio hole of the TSV makes it difficult for light to reach the bottom surface, conventional optical methods using visible lights cannot determine the depth value. By adopting an optical comb of a femtosecond pulse laser in the infra-red range as a light source, the depths of TSVs having aspect ratio of about 7 were measured. This measurement was done at high speed based on spectral resolved interferometry. The proposed method is expected to be an alternative method for depth inspection of TSVs.

2020년 6월 업데이트

Edited Image 2016-02-02 05-54-57
UST U.I. 워드마크 (투명).png

KRISS 연구소기업

미터랩 마크.jpg